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  • Transistors - Bipolar (BJT) - RF
Image Part # Manufacturer Description Pricing Quantity RoHS Package / Case Material Automotive Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage DC Collector/Base Gain hfe Min DC Current Gain hFE Max ECCN (US) Emitter- Base Voltage VEBO EU RoHS Factory Pack QuantityFactory Pack Quantity Gain Bandwidth Product fT HTS Manufacturer Maximum Base Emitter Saturation Voltage (V) Maximum Collector Base Voltage (V) Maximum Collector Cut-Off Current (nA) Maximum Collector-Emitter Saturation Voltage (V) Maximum Collector-Emitter Voltage (V) Maximum Collector-Emitter Voltage Range (V) Maximum DC Collector Current Maximum DC Collector Current (A) Maximum DC Collector Current Range (A) Maximum Emitter Base Voltage (V) Maximum Emitter Cut-Off Current (nA) Maximum Noise Figure (dB) Maximum Operating Temperature Maximum Operating Temperature (°C) Maximum Power Dissipation (mW) Maximum Rise Time (ns) Maximum Transition Frequency (MHz) Maximum Turn-Off Time (ns) Maximum Turn-On Time (ns) Minimum DC Current Gain Minimum DC Current Gain Range Minimum Operating Temperature Minimum Operating Temperature (°C) Mounting Mounting Styles Number of Elements per Chip Package Height PCB changed Pd - Power Dissipation PPAP RoHS Supplier Package Transistor Polarity Typical Input Capacitance (pF) Typical Output Capacitance (pF) Packaging Part Status Type Subcategory Technology Pin Count Configuration Product Type Collector Base Voltage (VCBO) Continuous Collector Current Product Category Diameter
Image Part # Manufacturer Description Pricing Quantity RoHS Package / Case Material Automotive Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage DC Collector/Base Gain hfe Min DC Current Gain hFE Max ECCN (US) Emitter- Base Voltage VEBO EU RoHS Factory Pack QuantityFactory Pack Quantity Gain Bandwidth Product fT HTS Manufacturer Maximum Base Emitter Saturation Voltage (V) Maximum Collector Base Voltage (V) Maximum Collector Cut-Off Current (nA) Maximum Collector-Emitter Saturation Voltage (V) Maximum Collector-Emitter Voltage (V) Maximum Collector-Emitter Voltage Range (V) Maximum DC Collector Current Maximum DC Collector Current (A) Maximum DC Collector Current Range (A) Maximum Emitter Base Voltage (V) Maximum Emitter Cut-Off Current (nA) Maximum Noise Figure (dB) Maximum Operating Temperature Maximum Operating Temperature (°C) Maximum Power Dissipation (mW) Maximum Rise Time (ns) Maximum Transition Frequency (MHz) Maximum Turn-Off Time (ns) Maximum Turn-On Time (ns) Minimum DC Current Gain Minimum DC Current Gain Range Minimum Operating Temperature Minimum Operating Temperature (°C) Mounting Mounting Styles Number of Elements per Chip Package Height PCB changed Pd - Power Dissipation PPAP RoHS Supplier Package Transistor Polarity Typical Input Capacitance (pF) Typical Output Capacitance (pF) Packaging Part Status Type Subcategory Technology Pin Count Configuration Product Type Collector Base Voltage (VCBO) Continuous Collector Current Product Category Diameter
Rectron 2N2907A
Mfr. Part #
2N2907A
Elecinsight Part #
15984-364-2N2907A
Rectron
-
Datasheet Compare
    Min.:1
    Mult.:1
    TO-18-3 Si No Rectron 60 V 2.6 V - 50 EAR99 5 V Compliant 10000 200 MHz 8541.21.00.75 Rectron 1.3@15mA@150mA|2.6@50mA@500mA 60 10 0.4@15mA@150mA|1.6@50mA@500mA 60 60 to 70 600 mA 0.6 0.5 to 2 5 - - + 200 C 200 400 40 200(Min) 100 45 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V 50 to 120 - 65 C -65 Through Hole Through Hole 1 5.33(Max) 3 400 mW No Details TO-18 PNP 30(Max) 8(Max) Bag Unconfirmed PNP Transistors Si 3 Single BJTs - Bipolar Transistors 60 V 600 mA Bipolar Transistors - BJT 5.84(Max)
    2N2907A
    2N2907A

    15984-364-2N2907A Rectron
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Rectron 2N2222A
    Mfr. Part #
    2N2222A
    Elecinsight Part #
    15984-364-2N2222A
    Rectron
    -
    Datasheet Compare
      Min.:1
      Mult.:1
      TO-18-3 Si No Rectron 40 V 1 V 50 40 EAR99 6 V Compliant 10000 300 MHz 8541.21.00.75 Rectron 1.2@15mA@150mA|2@50mA@500mA 75 10 0.3@15mA@150mA|1@50mA@500mA 40 40 to 50 800 mA 0.8 0.5 to 2 6 10 4 + 200 C 200 500 25 300(Min) - - 35@0.1mA@10V|50@1mA@10V|75@10mA@10V 30 to 50|50 to 120 - 65 C -65 Through Hole Through Hole 1 5.33(Max) 3 500 mW No Details TO-18 NPN 25(Max) 8(Max) Ammo Pack Active NPN Transistors Si 3 Single BJTs - Bipolar Transistors 75 V 800 mA Bipolar Transistors - BJT 5.84(Max)
      2N2222A
      2N2222A

      15984-364-2N2222A Rectron
      RoHS :
      Package : -
      In Stock : -
      1 : -
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      Discrete Semiconductor Products

      Transistors - Bipolar (BJT) - RF definition: A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both electrons and holes as charge carriers. Uni... Transistors - Bipolar (BJT) - RF Product Listing: 2N2907A,2N2222A.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Bipolar (BJT) - RF has 2 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.
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