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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Factory Lead Time | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of Pins | Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Cable cross-section | Collector-Emitter Breakdown Voltage | Collector-Emitter Saturation Voltage | Deviation | Drain Current-Max (ID) | Enhanced Relative Importance at 35°C | Equivalent | Force | Gross weight | Gross Weight | hFEMin | Ihs Manufacturer | Long-term Frequency Instability (Aging) | Melting Temperature | Moisture Sensitivity Levels | Nominal voltage | Number of Elements | Number of Mate/Unmate Cycles | Operating Ambient Temperature | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Soldering Temperature | Tested for One Minute | Transition Frequency-Nom (fT) | Transport Package Size/Quantity | Transport packaging size/quantity | Transport Packaging Size/Quantity | Packaging | Published | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Connector type | Type | Resistance | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Applications | Additional Feature | Capacitance | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Frequency Stability | Base Part Number | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Polarity | Configuration | Insulation Resistance | Voltage | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Halogen Free | Polarity/Channel Type | Transistor Type | Collector Emitter Voltage (VCEO) | Max Collector Current | Operating Temperature Range | JEDEC-95 Code | Drain-source On Resistance-Max | Transition Frequency | Design | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Collector Base Voltage (VCBO) | Power Dissipation-Max (Abs) | Emitter Base Voltage (VEBO) | Load Current | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Saturation Current | Diameter | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #BCV61CE6327HTSA1Elecinsight Part #376-375-BCV61CE6327HTSA1
IN STOCK: 629
| Infineon Technologies |
TRANSISTOR NPN DOUBLE SOT-143
Datasheet
Compare
| Min.:1 Mult.:1 | 4 Weeks | Tin | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | 4 | - | - | - | - | - | - | 30V | - | - | - | - | - | - | - | - | 110 | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | e3 | Last Time Buy | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | - | - | - | - | 150°C | -65°C | - | Current Mirror | - | - | 30V | 300mW | - | GULL WING | - | - | 100mA | 250MHz | - | - | BCV61 | - | AEC-Q101 | - | - | NPN | - | - | - | Dual | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 600mV | 100mA | - | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | - | 420 | - | - | - | - | 2.9mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| BCV61CE6327HTSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BCV61BE6327HTSA1Elecinsight Part #376-375-BCV61BE6327HTSA1
IN STOCK: 55
| Infineon Technologies |
Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3 Tab) SOT-143 T/R
Datasheet
Compare
| Min.:1 Mult.:1 | 4 Weeks | - | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | 4 | - | - | - | - | - | - | - | 600mV | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | e3 | Last Time Buy | 1 (Unlimited) | 4 | - | EAR99 | - | - | - | Tin (Sn) | 150°C | -65°C | - | Current Mirror | - | - | 30V | 300mW | DUAL | GULL WING | - | - | 100mA | 250MHz | - | - | BCV61 | - | AEC-Q101 | - | - | NPN | - | - | - | - | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 5V | 100mA | - | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | - | 200 | - | - | 900μm | 2.9mm | 1.3mm | No | - | ROHS3 Compliant | Lead Free | ||
| BCV61BE6327HTSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #BF550Elecinsight Part #376-375-BF550 | Infineon Technologies AG |
Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | - | - | , | - | - | Obsolete | - | - | - | - | 350 MHz | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.28 W | - | - | 0.025 A | 50 | - | - | - | - | - | - | - | - | - | ||
| BF550 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC161Elecinsight Part #376-375-BC161 | Infineon Technologies AG |
Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | - | - | - | - | Obsolete | - | No | - | - | 50 MHz | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.7 W | - | - | 1 A | 40 | - | - | - | - | - | - | - | - | - | ||
| BC161 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR9N20DElecinsight Part #376-375-IRFR9N20D
IN STOCK: 16740
| Infineon Technologies AG |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | 9.4 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | SINGLE | GULL WING | 240 | compliant | - | - | 30 | - | - | - | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-252AA | 0.38 Ω | - | - | 38 A | 200 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | ||
| IRFR9N20D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC141Elecinsight Part #376-375-BC141 | Infineon Technologies AG |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 1 | - | - | 150 °C | - | - | - | - | - | - | Obsolete | - | No | - | - | 50 MHz | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.8 W | - | - | 1 A | 40 | - | - | - | - | - | - | - | - | - | ||
| BC141 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR3504ZElecinsight Part #376-375-IRFR3504Z | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 2 | SILICON | - | - | - | - | - | 42 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | 1 | - | 1 | - | - | 175 °C | - | - | PLASTIC/EPOXY | DPAK-3 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | No | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | NOT SPECIFIED | - | - | - | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-252AA | 0.009 Ω | - | - | 310 A | 40 V | 77 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFR3504Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPL60R085P7 E8235Elecinsight Part #376-375-IPL60R085P7 E8235
IN STOCK: 3000
| Infineon Technologies AG |
-
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IPL60R085P7 E8235 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPP120P04P4L03AKSAElecinsight Part #376-375-IPP120P04P4L03AKSA | Infineon Technologies AG |
-
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IPP120P04P4L03AKSA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC160Elecinsight Part #376-375-BC160 | Infineon Technologies AG |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | - | - | - | - | Obsolete | - | No | - | - | 50 MHz | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 3.7 W | - | - | 1 A | 40 | - | - | - | - | - | - | - | - | - | ||
| BC160 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7301TRElecinsight Part #376-375-IRF7301TR
IN STOCK: 600
| Infineon Technologies AG |
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | 0.2 kg | 8 | SILICON | 2 | - | - | - | - | 4.3 A | - | POS40 | - | - | 215.00 | - | INFINEON TECHNOLOGIES AG | - | 183...240 °C | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Obsolete | - | No | 285...330 °C | - | - | - | - | 29*25*35/50 | coil | - | e3 | - | - | - | - | EAR99 | - | Soft Tin-Lead Solder Sn/Pb | - | MATTE TIN | - | - | tin - 40%; lead - 60% | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | - | unknown | - | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | MS-012AA | 0.05 Ω | - | wire | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 2 | 2 mm | - | - | - | - | - | - | - | ||
| IRF7301TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC856WElecinsight Part #376-375-BC856W | Infineon Technologies AG |
Transistor,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | - | Obsolete | - | - | - | - | 100 MHz | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.2 W | - | - | 0.1 A | 125 | - | - | - | - | - | - | - | - | - | ||
| BC856W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFL014NElecinsight Part #376-375-IRFL014N
IN STOCK: 6810
| Infineon Technologies AG |
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | 1.9 A | 95% | - | 1 - 30 N | - | 2.22 | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 500 | -25 +70 °C | 150 °C | -55 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | No | - | ~ 500V | - | 42*28*18.5/2000 | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | NOT SPECIFIED | - | - | - | - | R-PSSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | 100 MOhm Min | ~ 50V | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-261AA | 0.16 Ω | - | - | - | 55 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 0.3 A | - | - | 1 | - | - | - | - | - | - | - | - | ||
| IRFL014N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR3704ZElecinsight Part #376-375-IRFR3704Z | Infineon Technologies AG |
Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | through hole | - | YES | - | - | - | 2 | SILICON | 1 | - | - | - | ± 30 ppm temperature characteristic (-20…+70 °C) | 30 A | - | - | - | - | 0.59 | - | INFINEON TECHNOLOGIES AG | max. ± 5 ppm/ year | - | - | - | - | - | - | - | - | miniature - US size | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | 42*28*18.5/5000 | - | - | - | - | - | - | - | - | - | EAR99 | - | HC49 Quartz Resonator | ESR max - 50 Ohm | - | - | - | - | - | - | 16 pF | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | - | 6 MHz | NOT SPECIFIED | ± 20 (at T=25 °C) ppm | - | - | - | R-PSSO-G2 | - | - | SINGLE WITH BUILT-IN DIODE | 500 (at Uappl.dc=100 V) MOhm min | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | -20…+70 °C | TO-252AA | 0.0084 Ω | - | - | 240 A | 20 V | 41 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | ||
| IRFR3704Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR24N15DElecinsight Part #376-375-IRFR24N15D
IN STOCK: 1
| Infineon Technologies AG |
Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | connector housing - PVC-45P | - | 2 | SILICON | 1 | 3 x 0.75 (42 strands x 0.15 mm) mm2 | - | - | - | 24 A | - | - | - | 330.00 | - | - | INFINEON TECHNOLOGIES AG | - | - | - | 250 V | - | - | - | - | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | - | No | - | - | - | - | 48*28*38/100 | - | - | - | e0 | - | - | - | - | EAR99 | IEC C14 (Male) - IEC C13 (Female) | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | SINGLE | GULL WING | 240 | not_compliant | - | - | 30 | - | - | - | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | TO-252AA | 0.095 Ω | - | - | 96 A | 150 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 1 | sheath - 6.5 ... 6.8 mm | - | 5000 mm | - | - | - | - | - | ||
| IRFR24N15D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SMBT6429Elecinsight Part #376-375-SMBT6429
IN STOCK: 19091
| Infineon Technologies AG |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | Obsolete | - | No | - | - | 100 MHz | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | not_compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.33 W | - | - | 0.2 A | 500 | - | - | - | - | - | - | - | - | - | ||
| SMBT6429 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SPU09N05Elecinsight Part #376-375-SPU09N05 | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 9.2A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, PLASTIC PACKAGE-3
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | - | - | 9.2 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 1 | - | - | 175 °C | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | IN-LINE | Obsolete | TO-251 | No | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | - | TIN LEAD | - | - | - | - | AVALANCHE RATED | - | - | - | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | - | - | - | 3 | - | R-PSIP-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | TO-251 | 0.1 Ω | - | - | 37 A | 55 V | 35 mJ | METAL-OXIDE SEMICONDUCTOR | - | 24 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SPU09N05 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF6714MPBFElecinsight Part #376-375-IRF6714MPBF | Infineon Technologies AG |
Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 3 | SILICON | - | - | - | - | - | 29 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 1 | - | - | 150 °C | - | - | UNSPECIFIED | CHIP CARRIER, R-XBCC-N3 | RECTANGULAR | CHIP CARRIER | Obsolete | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | BOTTOM | NO LEAD | 260 | compliant | - | - | 40 | - | - | - | - | R-XBCC-N3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | - | 0.0021 Ω | - | - | 234 A | 25 V | 175 mJ | METAL-OXIDE SEMICONDUCTOR | - | 89 W | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF6714MPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRL6903Elecinsight Part #376-375-IRL6903 | Infineon Technologies AG |
Power Field-Effect Transistor, 105A I(D), 30V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | NO | - | - | - | 3 | SILICON | - | - | - | - | - | 105 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | 1 | - | - | - | - | - | PLASTIC/EPOXY | TO-220AB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | - | MATTE TIN OVER NICKEL | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | - | - | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | P-CHANNEL | - | - | - | - | TO-220AB | 0.011 Ω | - | - | 360 A | 30 V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRL6903 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7105TRElecinsight Part #376-375-IRF7105TR
IN STOCK: 783
| Infineon Technologies AG |
Description: Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | YES | - | - | - | 8 | SILICON | 2 | - | - | - | - | 3.5 A | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | - | No | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | - | MATTE TIN | - | - | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | DUAL | GULL WING | - | unknown | - | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL AND P-CHANNEL | - | - | - | - | MS-012AA | 0.1 Ω | - | - | 14 A | 25 V | - | METAL-OXIDE SEMICONDUCTOR | - | 2 W | - | - | - | - | 2 | - | - | - | - | - | - | - | - | ||
| IRF7105TR |
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