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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | ECCN Code | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Profile | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #SSM3J02TElecinsight Part #4669-375-SSM3J02T
IN STOCK: 2376
| Toshiba America Electronic Components |
TRANSISTOR 1500 mA
Datasheet
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| Min.:1 Mult.:1 | - | - | YES | - | 3 | SILICON | 1 | - | - | - | 1.5 A | - | - | TOSHIBA CORP | - | - | PLASTIC/EPOXY | 2-3S1A, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | - | DUAL | GULL WING | - | unknown | - | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.7 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | ||
| SSM3J02T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK9A90EElecinsight Part #4669-375-TK9A90E
IN STOCK: 27500
| Toshiba America Electronic Components |
Description: Power MOSFET - Nch 700V<VDSS
Datasheet
Compare
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | NO | 54 | 3 | SILICON | 1 | socket | 2x27 | 2.54mm | 9 A | THT | 1.89 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 1.3 Ω | 27 A | 900 V | 454 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.254µm | UL94V-0 | ||
| TK9A90E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPCC8104Elecinsight Part #4669-375-TPCC8104
IN STOCK: 15000
| Toshiba America Electronic Components |
TRANSISTOR 20000 mA
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | YES | 62 | 8 | SILICON | 1 | socket | 2x31 | 2.54mm | 20 A | THT | 2.17 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | 2-3X1S, TSON-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | - | R-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0124 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.254µm | UL94V-0 | ||
| TPCC8104 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK13A60DElecinsight Part #4669-375-TK13A60D
IN STOCK: 18000
| Toshiba America Electronic Components |
TRANSISTOR 13 A
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 18 | 3 | SILICON | 1 | socket | 1x18 | 2.54mm | 13 A | THT | 0.68 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | End Of Life | SC-67 | - | - | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.43 Ω | 52 A | 600 V | 511 mJ | METAL-OXIDE SEMICONDUCTOR | 50 W | 60V | - | beryllium copper | 0.254µm | UL94V-0 | ||
| TK13A60D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK17A80WElecinsight Part #4669-375-TK17A80W
IN STOCK: 10
| Toshiba America Electronic Components |
Description: POWER
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 27 | 3 | SILICON | 1 | socket | 1x27 | 2.54mm | 17 A | THT | 1.3 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.29 Ω | 68 A | 800 V | 475 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.254µm | UL94V-0 | ||
| TK17A80W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN1R603PLElecinsight Part #4669-375-TPN1R603PL
IN STOCK: 20000
| Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | YES | 4 | 8 | SILICON | 1 | socket | 2x2 | 2.54mm | 80 A | THT | 0.22 g | TOSHIBA CORP | female | 175 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0025 Ω | 200 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 200 pF | beryllium copper | 0.75µm | UL94V-0 | ||
| TPN1R603PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TPC8067-HElecinsight Part #4669-375-TPC8067-H
IN STOCK: 9244
| Toshiba America Electronic Components |
TRANSISTOR 9000 mA
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | YES | 13 | 8 | SILICON | 1 | socket | 1x13 | 2.54mm | 9 A | SMT | 0.74 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | End Of Life | SOT | - | - | straight | pin strips | -40...163°C | EAR99 | - | DUAL | GULL WING | - | unknown | 3A | - | 8 | - | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.033 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 150V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TPC8067-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM6L39TUElecinsight Part #4669-375-SSM6L39TU
IN STOCK: 2550
| Toshiba America Electronic Components |
TRANSISTOR 1600 mA
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | - | 36 | - | - | - | socket | 1x36 | 2.54mm | - | THT | 2.7 g | TOSHIBA CORP | female | - | - | UF6, 2-2T1B, 6 PIN | - | - | Active | - | Yes | - | straight | pin strips | -40...163°C | EAR99 | - | - | - | - | unknown | 1.5A | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| SSM6L39TU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPCC8105Elecinsight Part #4669-375-TPCC8105
IN STOCK: 2472
| Toshiba America Electronic Components |
Description: TRANSISTOR 23000 mA
Datasheet
Compare
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 18 | 8 | SILICON | 1 | socket | 1x18 | 2.54mm | 23 A | THT | 1.35 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | THIN, 2-3X1A, 8 PIN | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | - | S-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0104 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TPCC8105 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #T2N7002AKElecinsight Part #4669-375-T2N7002AK
IN STOCK: 66000
| Toshiba America Electronic Components |
Small Signal MOS FET (Single)
Datasheet
Compare
| Min.:1 Mult.:1 | 20 Weeks | gold-plated | YES | 13 | 3 | SILICON | 1 | socket | 1x13 | 2.54mm | 0.2 A | THT | 0.98 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | EAR99 | - | DUAL | GULL WING | 260 | unknown | 1.5A | 30 | - | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 4.7 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | 60V | 0.7 pF | beryllium copper | 0.75µm | UL94V-0 | ||
| T2N7002AK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK62N60WElecinsight Part #4669-375-TK62N60W
IN STOCK: 230
| Toshiba America Electronic Components |
TRANSISTOR POWER
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 10 | 3 | SILICON | 1 | socket | 2x5 | 2.54mm | 61.8 A | THT | 0.92 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.04 Ω | 247 A | 600 V | 698 mJ | METAL-OXIDE SEMICONDUCTOR | 400 W | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TK62N60W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM3K05FUElecinsight Part #4669-375-SSM3K05FU
IN STOCK: 600
| Toshiba America Electronic Components |
Description: TRANSISTOR 400 mA
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | YES | 36 | 3 | SILICON | 1 | socket | 2x18 | 2.54mm | 0.4 A | THT | 2.97 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | 2-2E1E, USM, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-70 | - | 2.54mm | straight | pin strips | -40...163°C | - | LOW THRESHOLD | DUAL | GULL WING | - | unknown | 1.5A | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.2 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| SSM3K05FU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK31E60WElecinsight Part #4669-375-TK31E60W
IN STOCK: 1
| Toshiba America Electronic Components |
Nch 500V<VDSS≤700V
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 12 | 3 | SILICON | 1 | socket | 2x6 | 2.54mm | 30.8 A | SMT | 0.65 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 3A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.088 Ω | 123 A | 600 V | 437 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | 150V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TK31E60W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK25E60XElecinsight Part #4669-375-TK25E60X
IN STOCK: 288
| Toshiba America Electronic Components |
Description: Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Datasheet
Compare
| Min.:1 Mult.:1 | 20 Weeks | gold-plated | NO | 96 | 3 | SILICON | 1 | socket | 2x48 | 2.54mm | 25 A | THT | 5.19 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 3A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.125 Ω | 100 A | 600 V | 306 mJ | METAL-OXIDE SEMICONDUCTOR | - | 150V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TK25E60X | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK11S10N1LElecinsight Part #4669-375-TK11S10N1L
IN STOCK: 38862
| Toshiba America Electronic Components |
POWER
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | YES | 84 | 2 | SILICON | 1 | socket | 2x42 | 2.54mm | 11 A | THT | 5.04 g | TOSHIBA CORP | female | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | GULL WING | - | unknown | 1.5A | - | - | AEC-Q101 | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.05 Ω | 33 A | 100 V | 33.8 mJ | METAL-OXIDE SEMICONDUCTOR | 65 W | 60V | 67 pF | beryllium copper | 0.75µm | UL94V-0 | ||
| TK11S10N1L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPH3R506PLElecinsight Part #4669-375-TPH3R506PL
IN STOCK: 29
| Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 74 | 8 | SILICON | 1 | socket | 2x37 | 2.54mm | 94 A | THT | 4.44 g | TOSHIBA CORP | female | 175 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0035 Ω | 200 A | 60 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 116 W | 60V | 95 pF | beryllium copper | 0.75µm | UL94V-0 | ||
| TPH3R506PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK7A60W5Elecinsight Part #4669-375-TK7A60W5
IN STOCK: 3
| Toshiba America Electronic Components |
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Datasheet
Compare
| Min.:1 Mult.:1 | 32 Weeks | gold-plated | NO | 66 | 3 | SILICON | 1 | socket | 2x33 | 2.54mm | 7 A | THT | 3.96 g | TOSHIBA CORP | female | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.65 Ω | 28 A | 600 V | 92 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TK7A60W5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK750A60FElecinsight Part #4669-375-TK750A60F
IN STOCK: 38685
| Toshiba America Electronic Components |
Description: Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 12 | 3 | SILICON | 1 | socket | 2x6 | 2.54mm | 10 A | THT | 0.64 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.75 Ω | 40 A | 600 V | 201 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 60V | 8.5 pF | beryllium copper | 0.254µm | UL94V-0 | ||
| TK750A60F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN4R806PLElecinsight Part #4669-375-TPN4R806PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 1 | 8 | SILICON | 1 | socket | 1x1 | 2.54mm | 105 A | THT | 0.1 g | TOSHIBA CORP | female | 175 °C | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0048 Ω | 200 A | 60 V | 28 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 90 pF | beryllium copper | 0.75µm | UL94V-0 | ||
| TPN4R806PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK12A60UElecinsight Part #4669-375-TK12A60U
IN STOCK: 1950
| Toshiba America Electronic Components |
TRANSISTOR 12 A
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | NO | 45 | 3 | SILICON | 1 | socket | 1x45 | 2.54mm | 12 A | THT | 3.87 g | TOSHIBA CORP | female | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | End Of Life | SC-67 | - | - | straight | pin strips | -40...163°C | EAR99 | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.4 Ω | 24 A | 600 V | 69 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | 60V | - | beryllium copper | 0.75µm | UL94V-0 | ||
| TK12A60U |
Index :
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