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Image Part # Manufacturer Description Pricing Quantity RoHS Surface Mount Number of Terminals Access Time-Max Clock Frequency-Max (fCLK) Ihs Manufacturer Moisture Sensitivity Levels Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Rohs Code Supply Voltage-Nom (Vsup) JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Temperature Grade Supply Voltage-Min (Vsup) Number of Ports Operating Mode Supply Current-Max Organization Output Characteristics Seated Height-Max Memory Width Standby Current-Max Memory Density Parallel/Serial I/O Type Memory IC Type Standby Voltage-Min Refresh Cycles Sequential Burst Length Interleaved Burst Length Access Mode Self Refresh Length Width
Intelligent Memory Limited IM4G08D3FDBG-093
Mfr. Part #
IM4G08D3FDBG-093
Elecinsight Part #
700-535-IM4G08D3FDBG-093
Intelligent Memory Limited
DDR3L DRAM, 512MX8, CMOS, PBGA78, FBGA-78
Datasheet Compare
    Min.:1
    Mult.:1
    		 YES 78 - 1066 MHz INTELLIGENT MEMORY LTD - 536870912 words 512000000 95 °C - PLASTIC/EPOXY TFBGA FBGA-78 BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH Contact Manufacturer - - 1.35 V - - EAR99 - AUTO/SELF REFRESH 8542.32.00.36 BOTTOM BALL - 1 0.8 mm unknown - R-PBGA-B78 - 1.45 V - 1.283 V 1 SYNCHRONOUS 0.067 mA 512MX8 - 1.2 mm 8 0.036 A 4294967296 bit - COMMON DDR3L DRAM - 8192 4,8 4,8 MULTI BANK PAGE BURST YES 10.6 mm 7.5 mm
    IM4G08D3FDBG-093
    IM4G08D3FDBG-093

    700-535-IM4G08D3FDBG-093 Intelligent Memory Limited
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Samsung Semiconductor K4X51323PC-7GC3
    Mfr. Part #
    K4X51323PC-7GC3
    Elecinsight Part #
    700-535-K4X51323PC-7GC3
    		Samsung Semiconductor
    DDR DRAM, 16MX32, 6ns, CMOS, PBGA90
    Datasheet Compare
      Min.:1
      Mult.:1
      		 YES 90 6 ns 133 MHz SAMSUNG SEMICONDUCTOR INC 1 16777216 words 16000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA90,9X15,32 BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - Yes 1.8 V e3 Yes EAR99 MATTE TIN - 8542.32.00.28 BOTTOM BALL - - 0.8 mm compliant - R-PBGA-B90 Not Qualified - OTHER - - - 0.15 mA 16MX32 3-STATE - 32 0.0003 A 536870912 bit - COMMON DDR1 DRAM - 8192 2,4,8,16 2,4,8,16 - - - -
      K4X51323PC-7GC3
      K4X51323PC-7GC3

      700-535-K4X51323PC-7GC3 Samsung Semiconductor
      RoHS :
      Package : -
      In Stock : -
      1 : -
      Samsung Semiconductor K4S563233F-FN75
      Mfr. Part #
      K4S563233F-FN75
      Elecinsight Part #
      700-535-K4S563233F-FN75
      IN STOCK: 1000
      		Samsung Semiconductor
      Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
      Datasheet Compare
        Min.:1
        Mult.:1
        		 YES 90 6 ns 133 MHz SAMSUNG SEMICONDUCTOR INC - 8388608 words 8000000 85 °C -25 °C PLASTIC/EPOXY FBGA - BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Active - No - e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.24 BOTTOM BALL - - 0.8 mm compliant - R-PBGA-B90 Not Qualified - OTHER - - - 0.18 mA 8MX32 - - 32 0.0005 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 - - - -
        K4S563233F-FN75
        K4S563233F-FN75

        700-535-K4S563233F-FN75 Samsung Semiconductor
        RoHS :
        Package : -
        In Stock : 1000
        1 : -
        Samsung Semiconductor K4M51163LC-BG1H
        Mfr. Part #
        K4M51163LC-BG1H
        Elecinsight Part #
        700-535-K4M51163LC-BG1H
        		Samsung Semiconductor
        Description: Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54
        Datasheet Compare
          Min.:1
          Mult.:1
          		 YES 54 7 ns 111 MHz SAMSUNG SEMICONDUCTOR INC - 33554432 words 32000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA54,9X9,32 BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Obsolete - Yes 2.5 V - - EAR99 - - 8542.32.00.28 BOTTOM BALL - - 0.8 mm unknown - S-PBGA-B54 Not Qualified - OTHER - - - 0.18 mA 32MX16 3-STATE - 16 0.001 A 536870912 bit - COMMON SYNCHRONOUS DRAM - 8192 1,2,4,8,FP 1,2,4,8 - - - -
          K4M51163LC-BG1H
          K4M51163LC-BG1H

          700-535-K4M51163LC-BG1H Samsung Semiconductor
          RoHS :
          Package : -
          In Stock : -
          1 : -
          Samsung Semiconductor KM416S1020CT-F10
          Mfr. Part #
          KM416S1020CT-F10
          Elecinsight Part #
          700-535-KM416S1020CT-F10
          		Samsung Semiconductor
          Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
          Datasheet Compare
            Min.:1
            Mult.:1
            		 YES 50 7 ns 100 MHz SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP50,.46,32 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3.3 V e0 - EAR99 TIN LEAD AUTO/SELF REFRESH 8542.32.00.02 DUAL GULL WING - 1 0.8 mm unknown 50 R-PDSO-G50 Not Qualified 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS 0.115 mA 1MX16 3-STATE 1.2 mm 16 0.001 A 16777216 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 DUAL BANK PAGE BURST YES 20.95 mm 10.16 mm
            KM416S1020CT-F10
            KM416S1020CT-F10

            700-535-KM416S1020CT-F10 Samsung Semiconductor
            RoHS :
            Package : -
            In Stock : -
            1 : -
            Samsung Semiconductor K4S560432N-LC75
            Mfr. Part #
            K4S560432N-LC75
            Elecinsight Part #
            700-535-K4S560432N-LC75
            		Samsung Semiconductor
            Description: Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
            Datasheet Compare
              Min.:1
              Mult.:1
              		 YES 54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC 3 67108864 words 64000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - Yes 3.3 V - Yes EAR99 - AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING 260 1 0.8 mm unknown - R-PDSO-G54 Not Qualified 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS 0.04 mA 64MX4 3-STATE 1.2 mm 4 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 8192 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES 22.22 mm 10.16 mm
              K4S560432N-LC75
              K4S560432N-LC75

              700-535-K4S560432N-LC75 Samsung Semiconductor
              RoHS :
              Package : -
              In Stock : -
              1 : -
              Samsung Semiconductor KM416V1204CJ-6
              Mfr. Part #
              KM416V1204CJ-6
              Elecinsight Part #
              700-535-KM416V1204CJ-6
              		Samsung Semiconductor
              EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
              Datasheet Compare
                Min.:1
                Mult.:1
                		 YES 42 60 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ42,.44 SOJ42,.44 RECTANGULAR SMALL OUTLINE Obsolete SOJ No 3.3 V e0 - EAR99 Tin/Lead (Sn/Pb) RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL J BEND - 1 1.27 mm unknown 42 R-PDSO-J42 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.13 mA 1MX16 3-STATE 3.76 mm 16 0.0005 A 16777216 bit - COMMON EDO DRAM - 1024 - - FAST PAGE WITH EDO NO 27.31 mm 10.16 mm
                KM416V1204CJ-6
                KM416V1204CJ-6

                700-535-KM416V1204CJ-6 Samsung Semiconductor
                RoHS :
                Package : -
                In Stock : -
                1 : -
                Samsung Electronics Co. Ltd K4A4G165WE-BCWE0CV
                Mfr. Part #
                K4A4G165WE-BCWE0CV
                Elecinsight Part #
                700-535-K4A4G165WE-BCWE0CV
                		Samsung Electronics Co. Ltd
                -
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  K4A4G165WE-BCWE0CV
                  K4A4G165WE-BCWE0CV

                  700-535-K4A4G165WE-BCWE0CV Samsung Electronics Co. Ltd
                  RoHS :
                  Package : -
                  In Stock : -
                  1 : -
                  Samsung Semiconductor K4H511638G-LCB3T
                  Mfr. Part #
                  K4H511638G-LCB3T
                  Elecinsight Part #
                  700-535-K4H511638G-LCB3T
                  		Samsung Semiconductor
                  DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66,
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    		 YES 66 0.7 ns 166 MHz SAMSUNG SEMICONDUCTOR INC 3 33554432 words 32000000 70 °C - PLASTIC/EPOXY TSSOP - TSSOP66,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - Yes 2.5 V e6 Yes EAR99 TIN BISMUTH - 8542.32.00.28 DUAL GULL WING 260 - 0.635 mm unknown - R-PDSO-G66 Not Qualified - COMMERCIAL - - - 0.23 mA 32MX16 3-STATE - 16 0.005 A 536870912 bit - COMMON DDR1 DRAM - 8192 2,4,8 2,4,8 - - - -
                    K4H511638G-LCB3T
                    K4H511638G-LCB3T

                    700-535-K4H511638G-LCB3T Samsung Semiconductor
                    RoHS :
                    Package : -
                    In Stock : -
                    1 : -
                    Samsung Semiconductor KM416V1204AT-6
                    Mfr. Part #
                    KM416V1204AT-6
                    Elecinsight Part #
                    700-535-KM416V1204AT-6
                    		Samsung Semiconductor
                    EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 YES 44 60 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44/50,.46,32 TSOP44/50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3.3 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 0.8 mm unknown 44 R-PDSO-G44 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.15 mA 1MX16 3-STATE 1.2 mm 16 0.001 A 16777216 bit - COMMON EDO DRAM - 1024 - - FAST PAGE WITH EDO NO 18.41 mm 10.16 mm
                      KM416V1204AT-6
                      KM416V1204AT-6

                      700-535-KM416V1204AT-6 Samsung Semiconductor
                      RoHS :
                      Package : -
                      In Stock : -
                      1 : -
                      Samsung Semiconductor KM44C1000CJ-6
                      Mfr. Part #
                      KM44C1000CJ-6
                      Elecinsight Part #
                      700-535-KM44C1000CJ-6
                      IN STOCK: 80
                      		Samsung Semiconductor
                      Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO24, 0.300 INCH, SOJ-24
                      Datasheet Compare
                        Min.:1
                        Mult.:1
                        		 YES 24 60 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ20/26,.34 SOJ20/26,.34 RECTANGULAR SMALL OUTLINE Obsolete SOJ No 5 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL J BEND - 1 1.27 mm unknown 24 R-PDSO-J24 Not Qualified 5.5 V COMMERCIAL 4.5 V 1 ASYNCHRONOUS 0.075 mA 1MX4 3-STATE 3.76 mm 4 0.001 A 4194304 bit - COMMON FAST PAGE DRAM - 1024 - - FAST PAGE NO 15.88 mm 7.62 mm
                        KM44C1000CJ-6
                        KM44C1000CJ-6

                        700-535-KM44C1000CJ-6 Samsung Semiconductor
                        RoHS :
                        Package : -
                        In Stock : 80
                        1 : -
                        Samsung Semiconductor K4M56163LG-BG75
                        Mfr. Part #
                        K4M56163LG-BG75
                        Elecinsight Part #
                        700-535-K4M56163LG-BG75
                        		Samsung Semiconductor
                        Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          		 YES 54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC 1 16777216 words 16000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA54,9X9,32 BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Obsolete - Yes 2.5 V e3 Yes EAR99 MATTE TIN - 8542.32.00.24 BOTTOM BALL - - 0.8 mm unknown - S-PBGA-B54 Not Qualified - OTHER - - - 0.12 mA 16MX16 3-STATE - 16 0.001 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 8192 1,2,4,8,FP 1,2,4,8 - - - -
                          K4M56163LG-BG75
                          K4M56163LG-BG75

                          700-535-K4M56163LG-BG75 Samsung Semiconductor
                          RoHS :
                          Package : -
                          In Stock : -
                          1 : -
                          Intelligent Memory Limited IME5116SDBETG-75
                          Mfr. Part #
                          IME5116SDBETG-75
                          Elecinsight Part #
                          700-535-IME5116SDBETG-75
                          IN STOCK: 152
                          		Intelligent Memory Limited
                          Description: Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 YES 54 5.4 ns 133 MHz INTELLIGENT MEMORY LTD - 33554432 words 32000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2-54 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Contact Manufacturer - Yes 3.3 V - - - - AUTO/SELF REFRESH - DUAL GULL WING - 1 0.8 mm unknown - R-PDSO-G54 - 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS 0.17 mA 32MX16 - 1.2 mm 16 0.015 A 536870912 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST YES 22.22 mm 10.16 mm
                            IME5116SDBETG-75
                            IME5116SDBETG-75

                            700-535-IME5116SDBETG-75 Intelligent Memory Limited
                            RoHS :
                            Package : -
                            In Stock : 152
                            1 : -
                            Samsung Semiconductor K4S641633H-BL75
                            Mfr. Part #
                            K4S641633H-BL75
                            Elecinsight Part #
                            700-535-K4S641633H-BL75
                            		Samsung Semiconductor
                            Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 YES 54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC - 4194304 words 4000000 70 °C -25 °C PLASTIC/EPOXY FBGA - BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Active - Yes - - - EAR99 - - 8542.32.00.02 BOTTOM BALL - - 0.8 mm compliant - S-PBGA-B54 Not Qualified - OTHER - - - 0.135 mA 4MX16 3-STATE - 16 0.0005 A 67108864 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 - - - -
                              K4S641633H-BL75
                              K4S641633H-BL75

                              700-535-K4S641633H-BL75 Samsung Semiconductor
                              RoHS :
                              Package : -
                              In Stock : -
                              1 : -
                              Samsung Semiconductor KM48V8004CS-5
                              Mfr. Part #
                              KM48V8004CS-5
                              Elecinsight Part #
                              700-535-KM48V8004CS-5
                              		Samsung Semiconductor
                              Description: EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 YES 32 50 ns - SAMSUNG SEMICONDUCTOR INC - 8388608 words 8000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP32,.46 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3.3 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 1.27 mm unknown 32 R-PDSO-G32 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.11 mA 8MX8 3-STATE 1.2 mm 8 0.0005 A 67108864 bit - COMMON EDO DRAM - 8192 - - FAST PAGE WITH EDO NO 20.95 mm 10.16 mm
                                KM48V8004CS-5
                                KM48V8004CS-5

                                700-535-KM48V8004CS-5 Samsung Semiconductor
                                RoHS :
                                Package : -
                                In Stock : -
                                1 : -
                                Samsung Semiconductor KM48V8100AK-6
                                Mfr. Part #
                                KM48V8100AK-6
                                Elecinsight Part #
                                700-535-KM48V8100AK-6
                                		Samsung Semiconductor
                                Description: Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 YES 32 60 ns - SAMSUNG SEMICONDUCTOR INC - 8388608 words 8000000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ32,.44 SOJ32,.44 RECTANGULAR SMALL OUTLINE Obsolete SOJ No 3.3 V e0 No EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL J BEND - 1 1.27 mm unknown 32 R-PDSO-J32 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.14 mA 8MX8 3-STATE 3.76 mm 8 0.0005 A 67108864 bit - COMMON FAST PAGE DRAM - 4096 - - FAST PAGE NO 20.96 mm 10.16 mm
                                  KM48V8100AK-6
                                  KM48V8100AK-6

                                  700-535-KM48V8100AK-6 Samsung Semiconductor
                                  RoHS :
                                  Package : -
                                  In Stock : -
                                  1 : -
                                  Samsung Semiconductor K6R1016V1D-KI08
                                  Mfr. Part #
                                  K6R1016V1D-KI08
                                  Elecinsight Part #
                                  700-535-K6R1016V1D-KI08
                                  		Samsung Semiconductor
                                  Standard SRAM, 64KX16, 8ns, CMOS, PDSO44
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 YES 44 8 ns - SAMSUNG SEMICONDUCTOR INC 3 65536 words 64000 85 °C -40 °C PLASTIC/EPOXY SOJ SOJ, SOJ44,.44 SOJ44,.44 RECTANGULAR SMALL OUTLINE Obsolete - Yes 3.3 V e1 Yes 3A991.B.2.B TIN SILVER COPPER - 8542.32.00.41 DUAL J BEND 260 - 1.27 mm unknown - R-PDSO-J44 Not Qualified - INDUSTRIAL - - ASYNCHRONOUS 0.09 mA 64KX16 3-STATE - 16 0.005 A 1048576 bit PARALLEL COMMON STANDARD SRAM 3 V - - - - - - -
                                    K6R1016V1D-KI08
                                    K6R1016V1D-KI08

                                    700-535-K6R1016V1D-KI08 Samsung Semiconductor
                                    RoHS :
                                    Package : -
                                    In Stock : -
                                    1 : -
                                    Samsung Semiconductor K4M28163LH-BN75
                                    Mfr. Part #
                                    K4M28163LH-BN75
                                    Elecinsight Part #
                                    700-535-K4M28163LH-BN75
                                    		Samsung Semiconductor
                                    Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54
                                    Datasheet Compare
                                      Min.:1
                                      Mult.:1
                                      		 YES 54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC 1 8388608 words 8000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA54,9X9,32 BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Obsolete - Yes 2.5 V e3 Yes EAR99 MATTE TIN - 8542.32.00.02 BOTTOM BALL - - 0.8 mm unknown - S-PBGA-B54 Not Qualified - OTHER - - - 0.13 mA 8MX16 3-STATE - 16 0.0005 A 134217728 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 - - - -
                                      K4M28163LH-BN75
                                      K4M28163LH-BN75

                                      700-535-K4M28163LH-BN75 Samsung Semiconductor
                                      RoHS :
                                      Package : -
                                      In Stock : -
                                      1 : -
                                      Samsung Semiconductor K4S56163PF-RG1L
                                      Mfr. Part #
                                      K4S56163PF-RG1L
                                      Elecinsight Part #
                                      700-535-K4S56163PF-RG1L
                                      		Samsung Semiconductor
                                      Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 YES 54 7 ns 111 MHz SAMSUNG SEMICONDUCTOR INC - 16777216 words 16000000 85 °C -25 °C PLASTIC/EPOXY FBGA - BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Active - No 1.8 V e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.24 BOTTOM BALL - - 0.8 mm compliant - S-PBGA-B54 Not Qualified - OTHER - - - 0.085 mA 16MX16 3-STATE - 16 0.0003 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 8192 1,2,4,8,FP 1,2,4,8 - - - -
                                        K4S56163PF-RG1L
                                        K4S56163PF-RG1L

                                        700-535-K4S56163PF-RG1L Samsung Semiconductor
                                        RoHS :
                                        Package : -
                                        In Stock : -
                                        1 : -
                                        Samsung Semiconductor KM44C16104AS-6
                                        Mfr. Part #
                                        KM44C16104AS-6
                                        Elecinsight Part #
                                        700-535-KM44C16104AS-6
                                        		Samsung Semiconductor
                                        EDO DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 YES 32 60 ns - SAMSUNG SEMICONDUCTOR INC - 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP32,.46 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 5 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 1.27 mm unknown 32 R-PDSO-G32 Not Qualified 5.5 V COMMERCIAL 4.5 V 1 ASYNCHRONOUS 0.14 mA 16MX4 3-STATE 1.2 mm 4 0.001 A 67108864 bit - COMMON EDO DRAM - 4096 - - FAST PAGE WITH EDO NO 20.95 mm 10.16 mm
                                          KM44C16104AS-6
                                          KM44C16104AS-6

                                          700-535-KM44C16104AS-6 Samsung Semiconductor
                                          RoHS :
                                          Package : -
                                          In Stock : -
                                          1 : -

                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: IM4G08D3FDBG-093,K4X51323PC-7GC3,K4S563233F-FN75,K4M51163LC-BG1H,KM416S1020CT-F10.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.