A New 350 V GaN Power Transistor

EPC releases its 350 V GaN transistor with a maximum RDS(on) and a pulsed output current of 26 A – all in a smaller size and a lower cost.

Maurizio Di Paolo Emilio 588 14/04 2022-04-14 15:42:58

EPC releases its 350 V GaN transistor with a maximum RDS(on) and a pulsed output current of 26 A – all in a smaller size and a lower cost.

 

The EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 m and a pulsed output current of 26 A, has been released into production by EPC. The EPC2050 is 1.95 mm by 1.95 mm in size. Because of its small size, power solutions can take up ten times less space than silicon counterparts.

Gallium Nitride can significantly enhance the properties and design of semiconductors. It has high electron mobility, which means it can support higher gain at higher frequencies and with higher efficiency, compared to other materials. GaN is important to several power designs because of its ability to offer significantly improved performance while reducing the energy and the physical space needed to deliver that performance, when compared with conventional silicon. 

DC-DC conversion from/to 120 V-160 V (aerospace applications), 120 V-150 V motor control for medical motors, DC-AC inverters, multi-level converters such as Totem Pole PFC, and DC-DC solutions converting 400 V input to 12 V, 20 V, or 48 V outputs are among the applications that benefit from the EPC2050’s fast switching speed and small size. Fast chargers, battery management systems, electric vehicle charging, solar power inverters, high-power lidar for autonomous cars and delivery vehicles, LED lighting, RF switches, and consumer and industrial wirings such as wall-mounted outlets and Class D audio are among the other applications.

The EPC2050 350 V GaN transistor is also suitable for 120 VAC-only applications. A typical power supply bus voltage is between 170 V and 250 V. This includes applications specific to the Americas market, such as power tools and in-wall powered devices, seat-back airline 120 V inverters, and commercial LED lighting.

The EPC90121 development board is a 350 V maximum device voltage, 4 a maximum output current half bridge featuring the EPC2050, and the On-Semi NCP51820 gate driver. The board measures 2” x 2” and contains all critical components, and the layout supports optimal switching performance.

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