GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio
EPC expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100 V EPC2306 designed for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio.
The EPC2306 GaN FET offers a RDS(on) of 3.8 mOhm, together with small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with exposed top and footprint of 3 mm x 5 mm, offering a reduced size solution for the highest power density applications.
The EPC2306 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302. The two footprint compatible devices allow designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.
EPC also offers the EPC90145 development board, which includes an EPC2306 GaN FET in half bridge configuration, with a 100 V maximum device voltage, and 45 A maximum output current. The purpose of this board is to simplify the evaluation process to speed time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
The EPC2306 is priced at $3.08 each in 1 Ku volumes.
The EPC90145 development board is price at $200.00 each.
All devices and boards are available for immediate delivery.
Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.
