ON Semiconductor, a leading company in intelligent power and sensing technologies, recently launched the 1200V SPM31 Intelligent Power Module (IPM) utilizing the new 7th generation Insulated Gate Bipolar Transistor (IGBT) technology. Compared to other leading solutions in the market, the SPM31 IPM excels in energy efficiency, size, and power density, thereby reducing overall system costs. These IPMs integrate optimized IGBTs that achieve higher efficiency, making them ideal for three-phase variable frequency drive applications such as heat pumps, commercial HVAC systems, industrial pumps, and fans.
It is estimated that approximately 26% of global greenhouse gas emissions come from operational residential and commercial buildings, with indirect emissions from heating, cooling, and building power accounting for about 18% of that total. Governments worldwide are striving to fulfill their energy and climate commitments, making energy-efficient and low-carbon solutions increasingly important.
The SPM31 IPM achieves outstanding efficiency by regulating the power flow of variable frequency compressors and fans in heat pump and air conditioning systems through adjustments in the frequency and voltage supplied to the three-phase motors. For instance, ON Semiconductor's 25A SPM31 with FS7 technology reduces power losses by 10% and increases power density by 9% compared to the previous generation. In the context of electrification trends and higher energy efficiency requirements, these modules enable manufacturers to significantly improve the design of heating and cooling systems while enhancing energy efficiency. ON Semiconductor's SPM31 IPM series products, featuring FS7 technology, deliver superior performance, high energy efficiency, lower energy consumption, and further reduction in global harmful emissions.
These highly integrated modules incorporate gate driver ICs, various built-in protection features, and FS7 IGBTs, offering excellent thermal performance and supporting a wide current range from 15A to 35A. The SPM31 FS7 IGBT IPM boasts an ultra-high power density, making it an ideal solution for saving assembly space, improving performance expectations, and shortening development time. Additionally, the SPM31 IPM offers the following advantages:
- Gate drive and protection controls
- Low-loss, short-circuit-tolerant IGBTs
- Each phase has an IGBT half-bridge with a negative terminal to support various control algorithms
- Built-in undervoltage protection (UVP)
- Built-in bootstrap diodes and resistors
- Built-in high-speed high-voltage integrated circuit
- Single ground reference power supply
