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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Factory Lead Time | Lifecycle Status | Contact Plating | Mount | Mounting Type | Package / Case | Number of Pins | Weight | Transistor Element Material | Manufacturer Package Identifier | Current - Continuous Drain (Id) @ 25℃ | Drive Voltage (Max Rds On, Min Rds On) | Number of Elements | Power Dissipation (Max) | Turn Off Delay Time | Operating Temperature | Packaging | Published | Series | JESD-609 Code | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Resistance | Terminal Finish | Additional Feature | Voltage - Rated DC | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current Rating | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Qualification Status | Configuration | Number of Channels | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Turn On Delay Time | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Halogen Free | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Drain to Source Voltage (Vdss) | Vgs (Max) | Fall Time (Typ) | Continuous Drain Current (ID) | Threshold Voltage | JEDEC-95 Code | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | Pulsed Drain Current-Max (IDM) | Dual Supply Voltage | Avalanche Energy Rating (Eas) | Recovery Time | Max Junction Temperature (Tj) | Nominal Vgs | Feedback Cap-Max (Crss) | Height | Length | Width | Radiation Hardening | REACH SVHC | RoHS Status | Lead Free |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #IPD042P03L3GATMA1Elecinsight Part #376-369-IPD042P03L3GATMA1
IN STOCK: 168000
| Infineon Technologies |
Trans MOSFET P-CH 30V 70A 3-Pin(2 Tab) TO-252
Datasheet
Compare
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 70A Tc | 4.5V 10V | 1 | 150W Tc | - | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | OptiMOS™ | - | yes | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | - | - | - | - | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | P-Channel | SWITCHING | 4.2m Ω @ 70A, 10V | 2V @ 270μA | - | 12400pF @ 15V | 175nC @ 10V | - | 30V | ±20V | - | 70A | -1.5V | - | - | - | - | 0.0068Ohm | - | 280A | - | 269 mJ | - | - | - | - | - | - | - | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| IPD042P03L3GATMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #STD4NK100ZElecinsight Part #761-369-STD4NK100Z
IN STOCK: 9800
| STMicroelectronics |
Trans MOSFET N-CH 1KV 2.2A Automotive 3-Pin(2 Tab) DPAK T/R
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 2.2A Tc | 10V | 1 | 90W Tc | 32 ns | -55°C~150°C TJ | Cut Tape (CT) | - | Automotive, AEC-Q101, SuperMESH™ | - | - | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | STD4N | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | 1 | - | ENHANCEMENT MODE | 90W | DRAIN | 15 ns | N-Channel | SWITCHING | 6.8 Ω @ 1.1A, 10V | 4.5V @ 50μA | - | 601pF @ 25V | 18nC @ 10V | - | 1000V | ±30V | - | 2.2A | - | - | 30V | - | - | - | 1kV | 8.8A | - | - | - | 150°C | - | - | 2.63mm | - | - | - | - | ROHS3 Compliant | - | ||
| STD4NK100Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FDPF44N25TElecinsight Part #598-369-FDPF44N25T
IN STOCK: 32500
| ON Semiconductor |
MOSFET N-CH 250V 44A TO-220F
Datasheet
Compare
| Min.:1 Mult.:1 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | - | Through Hole | Through Hole | TO-220-3 Full Pack | 3 | 2.27g | SILICON | - | 44A Tc | 10V | 1 | 38W Tc | 85 ns | -55°C~150°C TJ | Tube | 2013 | UniFET™ | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 69mOhm | Tin (Sn) | - | - | - | - | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | - | Not Qualified | - | - | Single | ENHANCEMENT MODE | 38W | ISOLATED | 53 ns | N-Channel | SWITCHING | 69m Ω @ 22A, 10V | 5V @ 250μA | - | 2870pF @ 25V | 61nC @ 10V | 402ns | - | ±30V | 112 ns | 44A | 3V | TO-220AB | 30V | - | - | - | 250V | - | - | 2055 mJ | - | - | - | - | 16.07mm | 10.36mm | 4.9mm | - | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDPF44N25T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF6644TRPBFElecinsight Part #376-369-IRF6644TRPBF
IN STOCK: 4800
| Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | DirectFET™ Isometric MN | 5 | - | SILICON | - | 10.3A Ta 60A Tc | 10V | 1 | 2.8W Ta 89W Tc | 34 ns | -40°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e1 | - | Active | 1 (Unlimited) | 3 | - | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | LOW CONDUCTION LOSS | 100V | BOTTOM | - | - | - | 10.3A | - | - | - | R-XBCC-N3 | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 89W | DRAIN | 17 ns | N-Channel | - | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | - | 2210pF @ 25V | 47nC @ 10V | 26ns | - | ±20V | 16 ns | 8.3A | 4.8V | - | 20V | - | - | - | 100V | 228A | - | 86 mJ | - | - | 4.8 V | - | 508μm | 6.35mm | 5.0546mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF6644TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #SPA16N50C3XKSA1Elecinsight Part #376-369-SPA16N50C3XKSA1 | Infineon Technologies |
Trans MOSFET N-CH 560V 16A 3-Pin(3 Tab) TO-220FP
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | Through Hole | Through Hole | TO-220-3 Full Pack | 3 | - | SILICON | - | 16A Tc | 10V | 1 | 34W Tc | 50 ns | -55°C~150°C TJ | Tube | 2004 | CoolMOS™ | e3 | yes | Not For New Designs | 1 (Unlimited) | 3 | - | EAR99 | - | Tin (Sn) | AVALANCHE RATED | 560V | SINGLE | - | NOT SPECIFIED | - | 16A | NOT SPECIFIED | - | 3 | - | Not Qualified | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | ISOLATED | 10 ns | N-Channel | SWITCHING | 280m Ω @ 10A, 10V | 3.9V @ 675μA | Halogen Free | 1600pF @ 25V | 66nC @ 10V | 8ns | - | ±20V | - | 16A | - | TO-220AB | 20V | 500V | - | 0.28Ohm | - | 48A | - | 460 mJ | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| SPA16N50C3XKSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #DMN5L06K-7Elecinsight Part #233-369-DMN5L06K-7
IN STOCK: 106600
| Diodes Incorporated |
MOSFET N-CH 50V 300MA SOT23-3
Datasheet
Compare
| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3 | 7.994566mg | SILICON | - | 300mA Ta | 1.8V 5V | 1 | 350mW Ta | - | -65°C~150°C TJ | Tape & Reel (TR) | 2008 | - | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 2Ohm | Matte Tin (Sn) | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | 50V | DUAL | GULL WING | 260 | - | 300mA | 40 | - | 3 | - | - | - | 1 | Single | ENHANCEMENT MODE | 350mW | - | - | N-Channel | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | - | 50pF @ 25V | - | - | - | ±20V | - | 300mA | 1V | - | 20V | - | - | - | 50V | - | - | - | - | 150°C | - | 5 pF | 1.1mm | 2.9mm | 1.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| DMN5L06K-7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FDP26N40Elecinsight Part #598-369-FDP26N40
IN STOCK: 15000
| ON Semiconductor |
MOSFET N-CH 400V 26A TO-220
Datasheet
Compare
| Min.:1 Mult.:1 | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Tin | Through Hole | Through Hole | TO-220-3 | 3 | 1.8g | SILICON | - | 26A Tc | 10V | 1 | 265W Tc | 115 ns | -55°C~150°C TJ | Tube | 2013 | UniFET™ | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 160MOhm | - | AVALANCHE RATED | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | ENHANCEMENT MODE | 265W | - | 45 ns | N-Channel | SWITCHING | 160m Ω @ 13A, 10V | 5V @ 250μA | - | 3185pF @ 25V | 60nC @ 10V | 100ns | - | ±30V | 66 ns | 26A | - | TO-220AB | 30V | - | - | - | 400V | - | - | - | - | - | - | - | 15.38mm | 10.1mm | 4.7mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDP26N40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF1018EPBFElecinsight Part #376-369-IRF1018EPBF
IN STOCK: 303
| Infineon Technologies |
MOSFET N-CH 60V 79A TO-220AB
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | Tin | Through Hole | Through Hole | TO-220-3 | 3 | - | SILICON | - | 79A Tc | 10V | 1 | 110W Tc | 55 ns | -55°C~175°C TJ | Tube | 2002 | HEXFET® | - | - | Active | 1 (Unlimited) | 3 | - | EAR99 | 8.4MOhm | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Single | ENHANCEMENT MODE | 110W | DRAIN | 13 ns | N-Channel | SWITCHING | 8.4m Ω @ 47A, 10V | 4V @ 100μA | - | 2290pF @ 50V | 69nC @ 10V | 35ns | - | ±20V | 46 ns | 79A | 4V | TO-220AB | 20V | - | - | - | 60V | - | - | 88 mJ | 39 ns | - | - | - | 9.017mm | 10.668mm | 4.826mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRF1018EPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #STL42P6LLF6Elecinsight Part #761-369-STL42P6LLF6
IN STOCK: 12000
| STMicroelectronics |
MOSFET P-CH 60V 42A 8POWERFLAT
Datasheet
Compare
| Min.:1 Mult.:1 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | - | Surface Mount | Surface Mount | 8-PowerVDFN | 8 | - | SILICON | PowerFLAT5x6-A0ER_8231817 | 42A Tc | 4.5V 10V | 1 | 100W Tc | 171 ns | 175°C TJ | Cut Tape (CT) | - | STripFET™ F6 | e3 | - | Active | 1 (Unlimited) | 5 | - | EAR99 | - | Matte Tin (Sn) | - | - | DUAL | - | 260 | not_compliant | - | NOT SPECIFIED | STL42 | - | R-PDSO-F5 | - | - | 1 | Single | ENHANCEMENT MODE | 4.8W | DRAIN | 51.4 ns | P-Channel | SWITCHING | 26m Ω @ 4.5A, 10V | 2.5V @ 250μA | - | 3780pF @ 25V | 30nC @ 4.5V | - | 60V | ±20V | - | -42A | - | - | 20V | - | - | 0.034Ohm | -60V | - | - | - | - | 175°C | - | - | 1mm | 6.35mm | 5.4mm | - | - | ROHS3 Compliant | Lead Free | ||
| STL42P6LLF6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFHM830TRPBFElecinsight Part #376-369-IRFHM830TRPBF
IN STOCK: 60880
| Infineon Technologies |
MOSFET N-CH 30V 21A PQFN
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | 8-VQFN Exposed Pad | 8 | - | SILICON | - | 21A Ta 40A Tc | 4.5V 10V | 1 | 2.7W Ta 37W Tc | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 5 | - | EAR99 | 6MOhm | Matte Tin (Sn) | - | - | DUAL | - | - | - | - | - | - | - | S-PDSO-N5 | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 2.7W | DRAIN | 12 ns | N-Channel | SWITCHING | 3.8m Ω @ 20A, 10V | 2.35V @ 50μA | - | 2155pF @ 25V | 31nC @ 10V | 25ns | - | ±20V | 9.2 ns | 21A | 1.8V | - | 20V | - | 40A | - | 30V | - | - | - | - | - | 1.8 V | - | 1mm | 3.3mm | 3.3mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFHM830TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FDS9431AElecinsight Part #598-369-FDS9431A
IN STOCK: 10000
| ON Semiconductor |
MOSFET P-CH 20V 3.5A 8SOIC
Datasheet
Compare
| Min.:1 Mult.:1 | 8 Weeks | ACTIVE (Last Updated: 1 week ago) | Tin | Surface Mount | Surface Mount | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | - | 3.5A Ta | 2.5V 4.5V | 1 | 2.5W Ta | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1999 | - | e3 | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 130mOhm | - | - | -20V | DUAL | GULL WING | - | - | -3.5A | - | - | - | - | - | - | - | Single | ENHANCEMENT MODE | 2.5W | - | 6.5 ns | P-Channel | SWITCHING | 130m Ω @ 3.5A, 4.5V | 1V @ 250μA | - | 405pF @ 10V | 8.5nC @ 4.5V | 20ns | 20V | ±8V | 21 ns | -3.5A | -600mV | - | 8V | - | - | - | -20V | - | -20V | - | - | - | -600 mV | - | 1.5mm | 5mm | 4mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| FDS9431A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IPB80N06S2L07ATMA3Elecinsight Part #376-369-IPB80N06S2L07ATMA3
IN STOCK: 2000
| Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
Datasheet
Compare
| Min.:1 Mult.:1 | 10 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | - | - | SILICON | - | 80A Tc | 4.5V 10V | 1 | 210W Tc | - | -55°C~175°C TJ | Tape & Reel (TR) | 2006 | OptiMOS™ | - | yes | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | DRAIN | - | N-Channel | - | 6.7m Ω @ 60A, 10V | 2V @ 150μA | - | 3160pF @ 25V | 130nC @ 10V | - | - | ±20V | - | 80A | - | - | - | 55V | - | 0.0097Ohm | - | 320A | - | 450 mJ | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPB80N06S2L07ATMA3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRLR8721TRPBFElecinsight Part #376-369-IRLR8721TRPBF
IN STOCK: 25000
| Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 65A Tc | 4.5V 10V | 1 | 65W Tc | 9.4 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | - | Obsolete | 1 (Unlimited) | 2 | - | EAR99 | 8.4MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | - | - | SINGLE | GULL WING | 260 | - | - | 30 | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | 65W | DRAIN | 8.8 ns | N-Channel | SWITCHING | 8.4m Ω @ 25A, 10V | 2.35V @ 25μA | - | 1030pF @ 15V | 13nC @ 4.5V | 30ns | - | ±20V | 6.5 ns | 65A | - | TO-252AA | 20V | - | - | - | 30V | 260A | - | - | - | - | - | - | 2.3876mm | 6.7056mm | 6.22mm | No | - | ROHS3 Compliant | Lead Free | ||
| IRLR8721TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR24N15DTRPBFElecinsight Part #376-369-IRFR24N15DTRPBF
IN STOCK: 5756
| Infineon Technologies |
MOSFET N-CH 150V 24A DPAK
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 24A Tc | 10V | 1 | 140W Tc | 19 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | 95Ohm | Matte Tin (Sn) - with Nickel (Ni) barrier | - | 150V | - | GULL WING | 260 | - | 24A | 30 | - | - | R-PSSO-G2 | - | - | - | Single | ENHANCEMENT MODE | 140W | DRAIN | 11 ns | N-Channel | SWITCHING | 95m Ω @ 14A, 10V | 5V @ 250μA | - | 890pF @ 25V | 45nC @ 10V | 53ns | - | ±30V | 15 ns | 24A | 5V | TO-252AA | 30V | - | - | - | 150V | 96A | 150V | - | - | - | 5 V | - | 2.26mm | 6.7056mm | 2.39mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| IRFR24N15DTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF2804STRL7PPElecinsight Part #376-369-IRF2804STRL7PP
IN STOCK: 20000
| Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 7 | - | SILICON | - | 160A Tc | 10V | 1 | 330W Tc | 110 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 6 | - | EAR99 | 1.6MOhm | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 40V | - | GULL WING | 260 | - | 160A | 30 | - | - | R-PSSO-G6 | - | - | - | Single | ENHANCEMENT MODE | 330W | DRAIN | 13 ns | N-Channel | SWITCHING | 1.6m Ω @ 160A, 10V | 4V @ 250μA | - | 6930pF @ 25V | 260nC @ 10V | 150ns | - | ±20V | 105 ns | 320A | 4V | - | 20V | - | - | - | 40V | - | - | - | 65 ns | - | 4 V | - | 4.5466mm | 10.5mm | 8.15mm | No | No SVHC | ROHS3 Compliant | Contains Lead | ||
| IRF2804STRL7PP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR48ZTRLPBFElecinsight Part #376-369-IRFR48ZTRLPBF
IN STOCK: 30000
| Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
Datasheet
Compare
| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | - | SILICON | - | 42A Tc | 10V | 1 | 91W Tc | 40 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | e3 | - | Active | 1 (Unlimited) | 2 | - | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | - | GULL WING | 260 | - | - | 30 | - | - | R-PSSO-G2 | - | - | - | Single | ENHANCEMENT MODE | 91W | DRAIN | 15 ns | N-Channel | SWITCHING | 11m Ω @ 37A, 10V | 4V @ 50μA | - | 1720pF @ 25V | 60nC @ 10V | 61ns | - | ±20V | 35 ns | 42A | - | TO-252AA | 20V | - | - | - | 55V | 250A | - | 74 mJ | - | - | - | - | 2.3876mm | 10.3886mm | 6.73mm | No | - | ROHS3 Compliant | - | ||
| IRFR48ZTRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IPT020N10N3ATMA1Elecinsight Part #376-369-IPT020N10N3ATMA1
IN STOCK: 26008
| Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF
Datasheet
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| Min.:1 Mult.:1 | 18 Weeks | - | - | Surface Mount | Surface Mount | 8-PowerSFN | 8 | - | SILICON | PG-HSOF-8 | 300A Tc | 6V 10V | 1 | 375W Tc | 84 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | - | Active | 1 (Unlimited) | 8 | - | EAR99 | - | Tin (Sn) | ULTRA LOW RESISTANCE | - | SINGLE | FLAT | 260 | not_compliant | - | 40 | - | - | - | - | SINGLE WITH BUILT-IN DIODE | 1 | - | ENHANCEMENT MODE | 375W | DRAIN | 34 ns | N-Channel | - | 2m Ω @ 150A, 10V | 3.5V @ 272μA | Halogen Free | 11200pF @ 50V | 156nC @ 10V | - | - | ±20V | - | 300A | 2V | - | 20V | 100V | - | 0.02Ohm | 100V | - | - | - | - | 175°C | - | - | 2.4mm | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPT020N10N3ATMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #STP80NF03L-04Elecinsight Part #761-369-STP80NF03L-04
IN STOCK: 12888
| STMicroelectronics |
MOSFET N-CH 30V 80A TO-220
Datasheet
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| Min.:1 Mult.:1 | 12 Weeks | - | - | Through Hole | Through Hole | TO-220-3 | 3 | - | SILICON | - | 80A Tc | 4.5V 10V | 1 | 300W Tc | 110 ns | 175°C TJ | Tube | - | STripFET™ II | e3 | yes | Active | 1 (Unlimited) | 3 | - | EAR99 | 4.5MOhm | Matte Tin (Sn) | - | 30V | - | - | - | - | 80A | - | STP80N | 3 | - | - | - | 1 | Single | ENHANCEMENT MODE | 300W | DRAIN | 30 ns | N-Channel | SWITCHING | 4.5m Ω @ 40A, 10V | 2.5V @ 250μA | - | 5500pF @ 25V | 110nC @ 4.5V | 270ns | - | ±20V | 95 ns | 80A | 1.5V | TO-220AB | 20V | - | - | - | 30V | - | - | - | - | 175°C | - | - | 19.68mm | 10.4mm | 4.6mm | No | No SVHC | ROHS3 Compliant | Lead Free | ||
| STP80NF03L-04 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPD60R600C6ATMA1Elecinsight Part #376-369-IPD60R600C6ATMA1
IN STOCK: 30000
| Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252
Datasheet
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| Min.:1 Mult.:1 | 12 Weeks | - | - | Surface Mount | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 3.949996g | SILICON | - | 7.3A Tc | 10V | 1 | 63W Tc | 80 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | e3 | - | Not For New Designs | 1 (Unlimited) | 2 | - | - | - | Tin (Sn) | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | NOT SPECIFIED | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | 1 | - | ENHANCEMENT MODE | 63W | DRAIN | 12 ns | N-Channel | SWITCHING | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | - | 440pF @ 100V | 20.5nC @ 10V | 9ns | - | ±20V | 13 ns | 7.3A | - | - | 20V | 600V | - | 0.6Ohm | - | - | - | - | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Lead Free | ||
| IPD60R600C6ATMA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPB020N10N5ATMA1Elecinsight Part #376-369-IPB020N10N5ATMA1
IN STOCK: 27
| Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3
Datasheet
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| Min.:1 Mult.:1 | 13 Weeks | - | - | Surface Mount | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 3.949996g | SILICON | - | 120A Tc | 6V 10V | 1 | 375W Tc | 77 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | - | - | Active | 1 (Unlimited) | 2 | - | EAR99 | - | - | - | - | - | GULL WING | NOT SPECIFIED | - | - | NOT SPECIFIED | - | - | R-PSSO-G2 | - | - | 1 | Single | ENHANCEMENT MODE | 375W | DRAIN | 33 ns | N-Channel | SWITCHING | 2m Ω @ 100A, 10V | 3.8V @ 270μA | Halogen Free | 15600pF @ 50V | 210nC @ 10V | 26ns | - | ±20V | 29 ns | 120A | - | - | 20V | 100V | - | 0.002Ohm | 100V | 480A | - | 979 mJ | - | - | - | - | - | - | - | - | - | ROHS3 Compliant | Contains Lead | ||
| IPB020N10N5ATMA1 |
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