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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Housing material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Current consumption | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Mfr | Noal voltage | Number of Elements | Number of terals | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rise/fall time | Rohs Code | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Wire cross-section | Packaging | Series | Size / Dimension | JESD-609 Code | Part Status | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Supply voltage | Depth | Reach Compliance Code | Frequency | Frequency stability | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Voltage - Forward (Vf) (Typ) | Viewing Angle | Case Connection | Current - Test | Lens Style | Transistor Application | Lens Size | Polarity/Channel Type | Operating temperature range | Millicandela Rating | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Housing | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Height | Width | Height (Max) |
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  | Mfr. Part #JANTX2N6851Elecinsight Part #3644-375-JANTX2N6851 | Harris Semiconductor |
Description: Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | 4 A | - | HARRIS SEMICONDUCTOR | - | - | - | - | 150 °C | -55 °C | METAL | TO-39, 3 PIN | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | 160 ns | 150 ns | - | - | - | - | - | - | EAR99 | - | - | - | - | - | BOTTOM | WIRE | - | - | unknown | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | P-CHANNEL | - | - | TO-205AF | 0.8 Ω | 20 A | 200 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | 50 pF | - | - | - | - | ||
| JANTX2N6851 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF9640Elecinsight Part #3644-375-IRF9640 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | 11 A | - | HARRIS SEMICONDUCTOR | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | - | 134 ns | 90 ns | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | P-CHANNEL | - | - | TO-220AB | 0.5 Ω | 44 A | 200 V | 790 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | 125 W | - | - | - | ||
| IRF9640 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #HUF76121D3STElecinsight Part #3644-375-HUF76121D3ST | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | PA66, white | 2 | SILICON | 1 | - | 20 A | 2.92 | HARRIS SEMICONDUCTOR | - | 12/24 (DC) Vmin | - | 2, blade terminal 6.3 mm non-insulatedmin | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | 42*28*23.5/3000 | - | - | 0.3…0.85 mm2 | - | - | - | - | - | EAR99 | connector (socket) series 7022 | - | - | LOGIC LEVEL COMPATIBLE | - | SINGLE | GULL WING | - | 25 mm | unknown | - | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | -40…+120 °C | - | TO-252AA | 0.033 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 18.5 (body) mm | 10 mm | - | ||
| HUF76121D3ST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP450Elecinsight Part #3644-375-IRFP450 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | Surface Mount | 2-PLCC | NO | 2-PLCC | - | 3 | SILICON | 1 | 20 mA | 14 A | 5.17 | HARRIS SEMICONDUCTOR | Dialight | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | 5 ns | No | - | 63*35*17/120 | 160 ns | 93 ns | - | Tape & Reel (TR) | 597 | 3.20mm L x 2.80mm W | e0 | Active | EAR99 | Quartz generator HCMOS/ TTL | TIN LEAD | White | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 3.3 V | 20.4 mm | unknown | 16000 MHz | +/- 25 ppm | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | 3.1V | 131° | DRAIN | 10mA | Round with Flat Top | SWITCHING | 2.29mm Dia | N-CHANNEL | -40...+85 °C | 135mcd | TO-247 | 0.4 Ω | 56 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | DIL14 | - | 180 W | 5.4 mm | 12.8 mm | 2.15mm | ||
| IRFP450 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP9140Elecinsight Part #3644-375-IRFP9140 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | 19 A | - | HARRIS SEMICONDUCTOR | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | 140 ns | 120 ns | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | P-CHANNEL | - | - | TO-247 | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | - | 150 W | - | - | - | ||
| IRFP9140 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #JANTX2N6782Elecinsight Part #3644-375-JANTX2N6782 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 3.5 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | 45 ns | 40 ns | - | - | - | - | - | - | EAR99 | - | NOT SPECIFIED | - | RADIATION HARDENED | 8541.29.00.95 | BOTTOM | WIRE | - | - | unknown | - | - | MILITARY STANDARD (USA) | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-205AF | 0.6 Ω | 14 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 25 pF | 15 W | - | - | - | ||
| JANTX2N6782 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #JANTX2N7225Elecinsight Part #3644-375-JANTX2N7225 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 27.4 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | - | - | PLASTIC/EPOXY | - | SQUARE | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | NOT SPECIFIED | - | RADIATION HARDENED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | MILITARY STANDARD (USA) | S-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | - | - | N-CHANNEL | - | - | TO-254AA | 0.1 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 150 W | - | - | - | ||
| JANTX2N7225 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #JANTX2N6798Elecinsight Part #3644-375-JANTX2N6798 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 5.5 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | - | 90 ns | 80 ns | - | - | - | - | - | - | EAR99 | - | NOT SPECIFIED | - | RADIATION HARDENED | 8541.29.00.95 | BOTTOM | WIRE | - | - | unknown | - | - | MILITARY STANDARD (USA) | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-205AF | 0.4 Ω | 22 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 150 pF | 25 W | - | - | - | ||
| JANTX2N6798 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2N5484Elecinsight Part #3644-375-2N5484 | Harris Semiconductor |
Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | - | ||
| 2N5484 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RFL1N20LElecinsight Part #3644-375-RFL1N20L | Harris Semiconductor |
Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 1 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | BOTTOM | WIRE | - | - | unknown | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-205AF | 3.65 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | - | 35 pF | 8.33 W | - | - | - | ||
| RFL1N20L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUW40Elecinsight Part #3644-375-BUW40 | Harris Semiconductor |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 140 °C | - | - | , | - | - | Obsolete | - | No | 50 MHz | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 40 W | 1 A | 10 | - | - | - | - | - | - | ||
| BUW40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RFP18N10Elecinsight Part #3644-375-RFP18N10 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 18 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | 450 ns | 540 ns | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-220AB | 0.1 Ω | 45 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | 300 pF | 75 W | - | - | - | ||
| RFP18N10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PN4338Elecinsight Part #3644-375-PN4338 | Harris Semiconductor |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | - | - | 150 °C | - | - | , | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | JUNCTION | 0.3 W | - | - | - | - | - | - | - | - | ||
| PN4338 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RFH25P08Elecinsight Part #3644-375-RFH25P08 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 25 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | 650 ns | 300 ns | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | P-CHANNEL | - | - | TO-218AC | 0.15 Ω | 60 A | 80 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | 600 pF | 150 W | - | - | - | ||
| RFH25P08 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2N4117Elecinsight Part #3644-375-2N4117 | Harris Semiconductor |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | - | - | 175 °C | - | - | , | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | JUNCTION | 0.3 W | - | - | - | - | - | - | - | - | ||
| 2N4117 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #3N205Elecinsight Part #3644-375-3N205 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | 0.05 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 200 °C | - | - | , | - | - | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.36 W | - | - | - | - | - | - | - | - | ||
| 3N205 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFD223Elecinsight Part #3644-375-IRFD223 | Harris Semiconductor |
Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | - | - | 0.7 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | PLASTIC/EPOXY | IN-LINE, R-PDIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | No | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | - | DUAL | THROUGH-HOLE | - | - | unknown | - | - | - | R-PDIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | - | - | SWITCHING | - | N-CHANNEL | - | - | - | 1.2 Ω | - | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | - | - | - | - | - | - | ||
| IRFD223 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RFM10N12Elecinsight Part #3644-375-RFM10N12 | Harris Semiconductor |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 2 | SILICON | - | - | 10 A | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 150 °C | - | METAL | FLANGE MOUNT, O-MBFM-P2 | ROUND | FLANGE MOUNT | Obsolete | - | No | - | - | 270 ns | 310 ns | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | 8541.29.00.95 | BOTTOM | PIN/PEG | - | - | unknown | - | - | - | O-MBFM-P2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | TO-204AA | 0.3 Ω | 25 A | 120 V | - | METAL-OXIDE SEMICONDUCTOR | 75 W | - | - | - | 100 pF | 75 W | - | - | - | ||
| RFM10N12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUW40BElecinsight Part #3644-375-BUW40B | Harris Semiconductor |
Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 140 °C | - | - | , | - | - | Obsolete | - | No | 50 MHz | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 40 W | 1 A | 10 | - | - | - | - | - | - | ||
| BUW40B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SK3024Elecinsight Part #3644-375-SK3024 | Harris Semiconductor |
Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | - | - | - | - | HARRIS SEMICONDUCTOR | - | - | 1 | - | 175 °C | - | - | - | - | - | Obsolete | - | No | 150 MHz | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 5 W | 1 A | - | - | - | - | - | - | - | ||
| SK3024 |
Index :
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