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Threshold Voltage Stability and Gate Oxide Screening Challenges

A team at the Ohio State University has been studying various aspects of the SiC power MOSFET reliability, including threshold voltage instability and gate oxide reliability.

Enabling High Power Density and Efficient Systems with GaN

While there is some overlap in the power levels that GaN and SiC serve, GaN has fundamental characteristics that make it a better fit for applications in which high power density is critical.

GaN Epi Wafer Manufacturing for High-Voltage GaN Devices

Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN wafers in the quality you need and the thermal resistance you desire are challenges that fabs are still trying to overcome.

GaN Power HEMT > 650 V: A Parametric Analysis and Comparison to SiC MOSFET

This article focuses on the detailed parametric analysis and comparison between GaN Power HEMT > 650 V and SiC MOSFETs over the time.

Monolithic Integration of GaN Components Boosts Power Integrated Circuits

This article analyzes the successful co-integration of high-performance Schottky barrier diodes and D-mode HEMTs on a p-GaN HEMT–based 200-V GaN-on-SOI smart power IC platform.

Dynamic Circuit Model of a SiC VJFET

SiC semiconductors perform considerably well on various parameters like high temperatures, frequency, voltage, and several others.

Next Generation of GaN for Electrification

Gallium nitride is a key component of future energy-efficient electric vehicles and 5G networks. Hexagem, a Lund University–based startup, is developing a new solution at the Swedish research institute Rise testbed ProNano. This solution should contribute to greater electrification and a sustainable future.

Wide-Bandgap Semiconductors Drive Vehicle Electrification

In a panel session on wide-bandgap semiconductors for EVs at the recent Advanced Automotive Tech Forum, three industry experts discussed efforts to address GaN and SiC current challenges and future opportunities.

Wide Bandgap Technologies for a New Efficient Industry

Physical limitations prevent current silicon technology from achieving the higher power density, miniaturization, and energy conversion efficiency that the market needs from power products to meet growing environmental concerns.

How to Model Ground Current of Filter Inductors for MV SiC-MOSFET Converters